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| SHINDENGEN Schottky Rectifiers (SBD) Dual DF10SC4M 40V 10A FEATURES *oe SMT *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe High current capacity with Small Package APPLICATION *oe Switching OUTLINE DIMENSIONS Case : STO-220 Unit : mm power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings nit U Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z V 40 V Maximum Reverse Voltage RM V Pulse Voltage 45 V Repetitive Peak Surge Reversewidth 0.5ms, duty 1/40 RRSM I 50Hz sine wave, R-load, Rating for each diode Io/2, With O 10 A Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, On A 6.8 I Current sine wave, Non-repetitive 1 cycle peak value, Tj=125 Peak Surge ForwardFSM 50Hz 100 A P Pulse width 10Es, Rating of per diode, Tj=25*Z 330 W Repetitive Peak Surge Reverse Power RRSM *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings nit U Forward Voltage V I=5A, Pulse measurement, Rating of per diode FF Max.0.55 V I V=VM Pulse measurement, Rating of per diodemA Max.3.5 Reverse Current R R R, C =10V, Typ.180 pF Junction Capacitance j f=1MHz, V Rating of per diode R Thermal Resistance AEjcunction to case j Max.3 *Z/W AEja junction to ambient, On Al-Cu substrate Max.25 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd DF10SC4M Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] DF10SC4M Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 0.1 1 10 Reverse Voltage VR [V] DF10SC4M 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Reverse Current IR [mA] Tc=125C [TYP] 10 Tc=100C [TYP] 1 Tc=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] DF10SC4M 20 Reverse Power Dissipation Reverse Power Dissipation PR [W] 15 DC D=0.05 0.1 0.2 0.3 10 0.5 5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T DF10SC4M 10 Forward Power Dissipation DC Forward Power Dissipation PF [W] D=0.8 8 SIN 0.3 6 0.05 0.2 0.1 0.5 4 2 0 0 2 4 6 8 10 12 14 16 Average Rectified Forward Current IO [A] Tj = 150C 0 IO tp D=tp /T T DF10SC4M 20 Derating Curve Average Rectified Forward Current IO [A] DC 15 D=0.8 0.5 10 SIN 0.3 0.2 5 0.1 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 20V 0 0 IO VR tp D=tp /T T DF10SC4M 12 Derating Curve Average Rectified Forward Current IO [A] DC 10 D=0.8 8 0.5 SIN 6 0.3 0.2 4 0.1 0.05 2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 15V 0 0 IO VR tp D=tp /T T DF10SC4M 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=125C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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